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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Article
Author(s)
Atheer Al-Shaggah, Abdoul Rjoub and Mohammed Khasawneh
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DOI:10.17265/1934-8975/2014.06.021
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ABSTRACT
This paper provides an extension to the earlier work wherein a comparison between different models that had studied the effects of several parameters scaling on the performance of carbon nano tube field-effect transistors was presented. The evaluation for the studied models, with regard to the scaling effects, was to determine those which best reflect the very essence of carbon nano-tube technologies. Whereas the models subject this comparison (Fettoy, Roy, Stanford, and Southampton) were affected to varying degrees due to such parametric variations, the Stanford model was shown as still being valid for a wide range of chiralities and diameter sizes; a model that is also applicable for circuit simulations. In this paper, we present a comparative assessment of the various models subject to the study with regard to the effect of incorporating multiple carbon nanotubes in the channel region. We also assess the effect of oxide thickness on transistor performance in terms of the supply voltage threshold effects. Results leveraging our findings in this ongoing research endeavor reveal that many research efforts were not efficient to high degree due to high delay and not valid for circuit simulations.
KEYWORDS
Ballistic effects, CNT (carbon nanotubes), CNFET (carbon nanotube field-effect transistor), energy-saving technologies,
low-power applications, compact modeling, SPICE simulations
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