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1. Institute of Physics, SAS, Dubravska cesta 9, 845 11 Bratislava, Slovak Republic
2. Institute of Scientific and Industrial Research, Osaka University and CREST, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
3. Faculty of Chemical and Food Technology of STU, Radlinského 9, 812 37 Bratislava, Slovak Republic
4. Institute of Electrical Engineering SAS, Dubravska cesta 9, 841 04 Bratislava, Slovak Republic
5. Faculty of Mathematics, Physics, and Informatics of Comenius University, Mlynska Dolina, F2, 842 48 Bratislava, Slovak Republic


This contribution deals with the black silicon (BS) nanocrystalline specimens produced using the surface structure chemical transfer method (SSCT). This method can produce a nanocrystalline Si black color layer on c-Si with a thickness range of ~50 nm to ~300 nm via the contact of c-Si immersed in the chemical solution HF + H2O2 with a catalytic mesh. The photoluminescence properties are related to the formation of nanocrystals, the structural properties of which are similar to those formed on the back of a sawn Si wafer and the resulting splitting of large Si crystals. X-ray diffraction of the Si front and back sides confirms the dominant reflection of the 311 Si crystalline planes. We suppose that the formation of the black silicon over-layer is pre-determined by the crystalline defects induced by the applied sawing procedure, even though saw damage (defects introduced by the applied sawing procedure) is not necessary for the SSCT method. The formation of the pn type Si solar cell is presented, including black silicon over-layer and without
antireflection coating, with efficiency of ~19.1%.


Photoluminescence, black silicon, solar cell.

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