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Article
Dual Effects of Photo-Darkening and Photo-Bleaching in Ge-Se Films
Author(s)
István Csarnovics1,2, Muhamma Rizwa Latif2, Tyler Nichol1,2, Wan Kuang2, Maria Mitkova2, Miklós Veres3, Sándor Kökényesi4*
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DOI:10.17265/2161-6213/2015.1-2.011
Affiliation(s)
1. Department of Experimental Physics, University of Debrecen, Debrecen 4026, Hungary 2. Department of Electrical and Computer Engineering, Boise State University, Boise, ID 83725-2075, USA 3. Institute of Solid State Physics and Optics, Wigner RCP, HAS, Budapest 1121, Hungary 4. Department of Electrical Engineering, University of Debrecen, Debrecen 4026, Hungary.
ABSTRACT
Photo-induced changes are investigated in thermally evaporated GexSe1-x (x = 0.28, 0.33 and 0.40) films. Object of studies are fresh (as prepared), as well as annealed films. The studies indicated concentration dependence of the occurring effects for the studied compositions. Fast photo-darkening and slow photo-bleaching processes due to laser irradiation were detected in as-prepared films, while only photo-darkening effect was established for annealed samples. The origin of photo-darkening and photo-bleaching is explained based on the structural investigations carried out by Raman spectroscopy.
KEYWORDS
chalcogenides, photo-induced changes, photo-bleaching, photo-darkening, micro-Raman spectroscopy.
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