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Numerical Investigation of the h-ETL/MAPI_1-xCl_x Interface for Performance Optimization of Perovskite Solar Cells



Author(s)

Boureima Traore, Valentin Tapsoba, Adama Zongo, Issiaka Sankara, Soumaïla Ouedraogo and François Zougmoré

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DOI:10.17265/2161-6213/2026.1-3.002

Département de Physique, Laboratoire de Matériaux et Environnement (LA.M.E)-UFR/SEA, Université Joseph Ki-ZERBO, 03 BP 7021 Ouagadougou 03, Burkina Faso

In this study, numerical modeling based on the SCAPS-1D software is employed to analyze the influence of the h-ETL/ MAPI_1-xCl_x interface on the performance of perovskite solar cells. The impact of interface defect density, energy band alignment, and transport parameters of the h-ETL is systematically investigated. The results highlight the existence of a critical interface defect density threshold of approximately 1013 cm-2, beyond which device performance significantly deteriorates due to increased non-radiative recombination. A slightly positive conduction band offset, ranging from 0 to + 0.2 eV, is identified as an optimal condition that reduces interfacial recombination without hindering electron transport. The study also shows that increasing the electron mobility of the h-ETL has a negligible effect on the overall cell performance. Finally, a combined optimization of absorber and h-ETL doping reveals that moderate acceptor doping of the absorber, coupled with high donor doping of the h-ETL, enhances the internal electric field, limits recombination losses, and improves charge extraction. These findings provide valuable guidelines for the design and optimization of interfaces in high-efficiency perovskite solar cells.

Perovskite solar cells, MAPI_1-xCl_x, h-ETL, interface defects, SCAPS-1D.