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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Article
Author(s)
Sanghyun Lee1 and Kent J. Price2
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DOI:10.17265/1934-8975/2017.02.001
Affiliation(s)
1. School of Engineering and Information Systems, Morehead State University, Morehead, KY 40351, USA
2. Department of Math and Physics, Morehead State University, Morehead, KY 40351, USA
ABSTRACT
The quantum
efficiency of CZTSSe (copper zinc tin sulphur selenium) thin film solar cells
is numerically simulated at different temperatures and under a set of bias
conditions about the efficiency limiting factors. A systematic methodology is
developed and integrated into the proposed model to simulate the
characteristics in the quantum efficiency. The proposed model is demonstrated
with respect to an ideal device model under a set of bias conditions to selectively
deactivate performance limiting parameters under light and voltage biased
conditions. Under particular wavelength regions and bias conditions, a
particular type of defects near the heterojunction interface significantly
impact the carrier collection of devices. This deep acceptor type defect
distribution is located in the band of +/- 0.3
eV from the midgap. These defect states influence CZTSSe spectral responses of
red and IR light wavelength regions in quantum efficiency caused by affected
depletion width toward the back contact. Therefore, the quantum efficiency of
CZTSSe devices is altered disproportionally at biased conditions.
KEYWORDS
Degradation, thin film solar cells, defects, modeling.
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