Contact us
 |
[email protected] |
 |
3275638434 |
 |
 |
| Paper Publishing WeChat |
Useful Links
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Article
Author(s)
Dushyant Gupta1, Jyotika Jogi2 and P.J. George3
Full-Text PDF
XML 5010 Views
DOI:10.17265/2161-6221/2013.01.009
Affiliation(s)
1. Electronics Department, University College, Kurukshetra University, Kurukshetra 136119, India 2. Department of Physics & Electronics, ARSD College, University of Delhi, Delhi, India 3. KITM, Kurukshetra University, Kurukshetra, India
ABSTRACT
Plasma immersion ion implantation (PIII), a high-dose rate implantation technique, has vast applications in the area of semiconductor electronics, in surface modifications of biomaterials and even in the development of various nano-structures. In this technique, the target is immersed in plasma and the implantation is done by accelerating the ions with a negative pulse voltage, applied to the target. There have been continuous efforts for the development of dynamic sheath models for a PIII system in estimating the impurities to be doped. In this paper, an effort has been made to compare the two models developed for a multispecies collisionless PIII system, one being developed by Qin, et. al. and the other being suggested by the author. To illustrate the comparative study of these two models, various parameters have been computed and compared by considering a mixed plasma of He and Ar species, when a negative pulse of potential 15 KV and with pulse time of 10 μs is applied to the sample.
KEYWORDS
Plasma immersion ion implantation, dynamic sheath, ion plasma frequency, current density, doping concentration.
Cite this paper
References