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Article
Affiliation(s)

1. Laboratory of Advanced Technologies of Genie Electrics (LATAGE), Faculty of Electrical and Computer Engineering Mouloud Mammeri University (UMMTO), Tizi-Ouzou BP 17 RP 15000, Algeria 2. Institute for Microelectronics Materials Nanosciences of Provence (IM2NP) Aix-Marseille University, Marseille Cedex 20 F-13397, France

ABSTRACT

Molybdenum trioxide (MoO3), thin films have been deposited on glass substrates by spin-coating method using ammonium heptamolybdate tetrahydrate ((NH4)6Mo7O24·4H2O ) as a single source precursor of Mo and O. They were subjected to atmospheric heat treatment at different temperatures (200, 400 and 500 °C). MoO3 thin films obtained were characterized using X-ray diffraction techniques (XRD), scanning electron microscopy (SEM), energy dispersed spectroscopy (EDS) and integrating sphere. The XRD patterns of annealed films show the formation of ΜοΟ3 in a polycrystalline phase, formation of MoO3 was also confirmed by EDS. The SEM photographs show that the thin films obtained are in layer-type structure and their grains size increases with increasing of annealing temperatures. The measurement results of integrating sphere show that the MoO3 thin film prepared at 500 °C transmit about 72% and reflect about 12% of the visible spectrum.

KEYWORDS

Material, MoO3, oxide, lamellar, photovoltaic.

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