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Article
Porous Silicon: Volume-Specific Surface Area Determination from AFM Measurement Data
Author(s)
Şafak Doğan1, 2, Nihan Akın1, 2, Ceren Başköse1, 2, Tarık Asar1, 2, Tofig Memmedli1, 2 and Süleyman Özçelik1, 2
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DOI:10.17265/2161-6221/2013.08.006
Affiliation(s)
1. Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, Ankara 06500, Turkey 2. Photonics Research Center, University of Gazi D-Block,Teknikokullar, Ankara 06500, Turkey
ABSTRACT
Porous silicon layers manufactured by using (100), 1-5 ohm·cm p-type (boron doped) wafer by electrochemical etching in HF etanol solution. Photoluminescence (PL) spectra of anodically etched silicon obtained for different conditions studied and surface characteristics are investigated by AFM. This study gives a simple way to determine specific surface are of porous silicon which plays a major role with porosity for explaining the blue shift in photoluminescence peak. Properties such as specific surface area, pore size, and pore size distribution, the main surface properties of layer are investigated from AFM data which are important material characteristics in many processing applications. The “specific surface area” (Sspecific) generally defined as the area of solid surface per unit mass of material, solid volume or cross section area. From 3-D reconstructions of AFM data, the surface area and the volume of the porous layer can be estimated directly and volume-surface specific area is calculated. For porous silicon this feature can be defined as the total surface area per volume and given by the unit m2/cm3. The method is simple not need to construct a special set up for measurement and non destructive.
KEYWORDS
Specific surface area, porous silicon, porosity, photoluminescence, AFM.
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