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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Article
In-Situ Rs and Improvement in Thermal Stability of Nickel Silicides Using Different Interlayer Films
Author(s)
Chi-Ting Wu1, Wen-Hsi Lee1*, Ying-Lang Wang2 and Shih-Chieh Chang2
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DOI:10.17265/2161-6213/2015.3-4.009
Affiliation(s)
1. Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan. 2. Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan
ABSTRACT
Different interlayer films (Mo, Ru, Ta, Ti and Zn) were proposed to reduce sheet resistance (Rs) and improve thermal stability for nickel (Ni) silicide formation. It was found that the Zn and Mo interlayers reduced nickel silicide Rs much more than those by the Ru, Ta and Ti interlayers at 700 °C. The corrosion rates of the Mo, Ru, Ti and Zn interlayers were higher than that of NiSi in H2SO4:H2O2 = 4:1 at 80 °C. Overall, Zn and Mo were candidates of interlayers for Ni silicide formation due to lower nickel silicide resistivity, high etching selectivity with NiSi and better thermal stability.
KEYWORDS
Interlayer, in-situ Rs, NiSi, silicide.
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