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Article
IGZO/ZTO TFTs with Modulated Double Channel of Thickness Structures
Author(s)
Jin-Li Weng
Full-Text PDF XML 649 Views
DOI:10.17265/2159-5275/2021.05.001
Affiliation(s)
Department of Electrical Engineering, National University of Tainan, Tainan 70005, Taiwan
ABSTRACT
The device characteristics of IGZO/ZTO (indium-gallium-zinc oxide/zinc-tin oxide) TFTs (thin film transistors) with modulated channels were investigated. The field effect mobility was enhanced to 20.4 cm2/Vs in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at appropriate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.
KEYWORDS
IGZO, ZTO, double insulating layer, double channel layer.
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