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Article
Affiliation(s)

Department of Electrical Engineering, National University of Tainan, Tainan 70005, Taiwan

ABSTRACT

The device characteristics of IGZO/ZTO (indium-gallium-zinc oxide/zinc-tin oxide) TFTs (thin film transistors) with modulated channels were investigated. The field effect mobility was enhanced to 20.4 cm2/Vs in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at appropriate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

KEYWORDS

IGZO, ZTO, double insulating layer, double channel layer.

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