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PbS Nanostructures Thin Films by in situ PbS:Ni and PbS:Cd-Doping



Author(s)

Salvador Rosas Castilla¹, Marcial Zamora Tototzintle¹, Rey Baltazar López Flores², Leslie Chaltel Lima¹ and Oscar Portillo Moreno¹

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DOI:10.17265/2161-6213/2013.05.003

1. Faculty of Chemistry, Autonomous University of Puebla (UAP), Puebla, Mexico
2. Faculty of Electronics, Autonomous University of Puebla (UAP), Puebla, Mexico

PbS:Ni and PbS:Cd nanocrystalline films were prepared by chemical bath on glass substrates at deposition T = 80. Different Ni-Cd-doping levels were obtained changing the volume of the Ni an Cd-reagent-solution into the PbS growing solution. Measurements were carried out to characterize the semiconductor,such as X-ray diffraction (XRD) and optical absorption (OA). The morphological changes of the layers were analyzed using scanning electron microscopy (SEM). Diffraction X-ray spectra PbS:Ni and PbS:Cd displayed peaks at 2θ = 26.00, 30.07, 43.10, 51.00 and 53.48, indicating growth on the zinc blende face. The grain size determined by X-rays diffraction of the undoped samples, was found ~37 nm, whereas with the doped sample was 32-5 nm. PbS: Ni forbidden band gap energy (E_g) shift disclose a shift in the range of 1.4-2.4 V and PbS:Cd energy was estimated to be 0.15-0.5 eV. Gibbs free energy calculation for the Cu doping PbS is also included.

Thin films, nanocrystals, potential cell, quantum confinement effect, coordination complex.