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The Effect of Defects on the Mobility of HEMT Transistors Based on AlGaN/GaN



Author(s)

Meriem Hanzaz, Said Fadlo, Ahmed Nouacry and Abdelkader Touhami

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DOI:10.17265/1934-7375/2014.03.016

Laboratory of Materials Physics, Microelectronics, Automatic and Thermic, Faculty of Sciences Ain Chock Km8, University Hassan II, Casablanca 5366, Morocco

A phenomenological low-filed mobility model is developed to describe the dependence of the carrier mobility on the gate to source bias applied for AlGaN/GaN high electron mobility transistor. The results show excellent agreement with experimental data, when compared thereby proving the validity of the model. In the proposed work the temporal evolution of the mobility degradation shows a sharp decline in emission rates below 456 s^-1. We also note a sharp decline for large defects densities.

AlGaN/GaN, HEMT, low-filed mobility model.